Cryogenic GaAs high-electron-mobility-transistor amplifier for current noise measurements
نویسندگان
چکیده
We show that a cryogenic amplifier composed of homemade GaAs high-electron-mobility transistor (HEMT) is suitable for current-noise measurements in mesoscopic device at dilution-refrigerator temperatures. The lower noise characteristics our HEMT lead to floor the experimental setup and enable more efficient measurement than available with commercial HEMT. present dc transport properties gain amplifier. With employed quantum point contact, we demonstrate high resolution by comparing it conventional one using
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ژورنال
عنوان ژورنال: Review of Scientific Instruments
سال: 2021
ISSN: ['1089-7623', '1527-2400', '0034-6748']
DOI: https://doi.org/10.1063/5.0036419